Semiconductor integrated circuit device and method of activating the same

ABSTRACT

A dynamic RAM is divided into an input circuit block responsive to an input signal supplied from an external terminal, inclusive of an operation start signal, an internal circuit block activated in response to the signal inputted from the input circuit block, and an output circuit block for outputting a signal outputted from the internal circuit block to an external terminal. A plurality of switch MOSFETs are provided in parallel form between a power line for applying an operating voltage supplied from an external terminal and an internal power line for a first circuit portion in the internal circuit block, which does not need a storage operation upon its non-operating state. Further, the switch MOSFETs are stepwise turned on in response to controls signals produced by delaying a start signal supplied through the input circuit block in turn, so as to perform the supply of each operating voltage.

CROSS-REFERENCE TO RELATED APPLICATIONS

[0001] This application is a continuation of application Ser. No.08/985,425 filed Oct. 5, 1997; which is a continuation of applicationSer. No. 08/762,883 filed Dec. 12, 1996, the entire disclosures of whichare hereby incorporated by reference.

BACKGROUND OF THE INVENTION

[0002] The present invention relates to a semiconductor integratedcircuit device and a method of operating it, and principally to atechnique effective for use in a digital integrated circuit device suchas a dynamic RAM (Random Access Memory) comprising CMOS circuits eachcomposed of low threshold-voltage type MOSFETs and in a method ofoperating the digital integrated circuit device.

[0003] MOSFETs are reduced in withstand voltage with theirmicronization. It is therefore necessary to reduce an operating voltageof a circuit composed of the MOSFETs shaped in micro form. Since a gatevoltage supplied to the gate of each MOSFET is also lowered in thiscase, it is necessary to reduce the threshold voltage of the MOSFET sothat even the lowered gate voltage provides the flow of a desiredcurrent. However, when the threshold voltage is reduced, a leakagecurrent (hereinafter called “subthreshold leakage current”), which flowswhen each MOSFET is brought into an off state in which the gate andsource thereof are equal in voltage to each other, increasesexponentially. Thus, even in the case of a CMOS circuit, currentconsumption at its deactivation increases.

[0004] A circuit for reducing the subthreshold leakage current referredto above has been disclosed in Japanese Patent Application Laid-OpenNos. 6(1994)-237164 and 8(1996)-83487 and U.S. Pat. Nos. 5,274,601 and5,408,144 by way of illustrative example. As a method of reducing theleakage current by the present circuit, a CMOS inverter circuit at thetime that an input thereof at its non-operation and an output thereofhave been determined as a high level and a low level respectively, willbe described by way of example. In this case, a P channel MOSFET of theCMOS inverter circuit is in an off state and an N channel MOSFET thereofis in an on state. A leakage current produced in the CMOS invertercircuit is determined depending on the subthreshold leakage current ofthe turned-off P channel MOSFET.

[0005] A P channel power switch MOSFET is provided between an operatingvoltage node connected to the source of the P channel MOSFET of the CMOSinverter circuit and a power line and is turned off upon thenon-operation. In doing so, the potential at each internal power lineplaced in a floating state is reduced by the subthreshold leakagecurrent. When the potential is reduced to a some extent, a reverse biasvoltage is applied between the gate and source of the P channel MOSFETof the CMOS circuit so that the subthreshold leakage current can besubstantially eliminated.

SUMMARY OF THE INVENTION

[0006] The inventors of the present application have discussed theapplication of a method of reducing a subthreshold leakage current to adynamic RAM. In this case, the present inventors have found out variousproblems to be solved without sacrificing the operating speed of thedynamic RAM and to effectively reduce the subthreshold leakage current.Namely, an internal power switch MOSFET is turned off upon standby toreduce the subthreshold leakage current and is turned on upon memoryaccess. In doing so, a pulse-shaped large current will flow when acontrol signal for changing such a MOSFET from the off state to the onstate rises and the power node of the internal circuit is charged upaccording to the turning on of the MOSFET. This pulsating current willincrease the value of the peak current of a semiconductor integratedcircuit device. Upon mounting of a system, the current capacity of apower device must be increased so as to correspond to the peak value.

[0007] The increase in the circuit function and circuit scale of thesemiconductor integrated circuit device and the reduction in its sourcevoltage with the device micronization as described above tends toward asize reduction of a system such as a portable electronic device or thelike. A battery is also expected to be inevitably used as a powersupply. However, the increase in peak current offers a large problem asviewed from the power device of the system, which needs its sizereduction. Even in the case of the semiconductor integrated circuitdevice, large noise is produced in the power line with the occurrence ofthe peak current referred to above and hence an operating margin thereofis made worse.

[0008] An object of the present invention is to provide a semiconductorintegrated circuit device capable of realizing less power consumptionwhile ensuring its operating-margin. Another object of the presentinvention is to provide a semiconductor integrated circuit devicecapable of realizing high integration, a voltage reduction and lesspower consumption without sacrificing its operating speed.

[0009] The above and other objects, novel features and advantages of thepresent invention will become apparent from the following descriptionand the appended claims of the present specification, taken inconjunction with the accompanying drawings in which preferredembodiments of the present invention are shown by way of illustrativeexample.

[0010] A summary of a typical one of the inventions disclosed in thepresent application will be described in brief as follows: A pluralityof switch MOSFETs are provided in parallel form between internal powerlines for a plurality of circuit blocks divided for every functions andrespectively set so as to perform circuit operations in response tooperation control signals and a power line for delivering an operatingvoltage supplied from an external terminal. These switch MOSFETs areturned on in domino or stepwise form in response to control signalsproduced by successively delaying the operation control signals, so asto provide the supply of operating voltages.

[0011] A summary of another typical one of the inventions disclosed inthe present application will be described in brief as follows: A dynamicRAM is divided into an input circuit block responsive to an input signalsupplied from an external terminal, inclusive of an operation startsignal, an internal circuit block activated in response to the signalinputted from the input circuit block, and an output circuit block foroutputting a signal outputted from the internal circuit block to anexternal terminal. A plurality of switch MOSFETs are provided inparallel form between a power line for applying an operating voltagesupplied from an external terminal and an internal power line for afirst circuit portion in the internal circuit block, which does not needa storage operation upon its non-operating state. Further, the switchMOSFETs are turned on in domino or stepwise form in response to controlsignals produced by delaying a start signal supplied through the inputcircuit block in turn, so as to perform the supply of each operatingvoltage.

BRIEF DESCRIPTION OF THE DRAWINGS

[0012] The invention will now be described with reference to theaccompanying drawings wherein:

[0013]FIG. 1 is a block diagram principally showing examples of an inputunit, an X-system circuit and an array block employed in a dynamic RAMto which the present invention is applied;

[0014]FIG. 2 is a block diagram principally illustrating examples of aY-system and write circuit and an output buffer employed in the dynamicRAM to which the present invention is applied;

[0015]FIG. 3 is a circuit diagram showing one example of an X-systemaddress input unit employed in the dynamic RAM to which the presentinvention is applied;

[0016]FIG. 4 is a circuit diagram depicting one example of a predecodersupplied with an internal address signal, which is employed in thedynamic RAM to which the present invention is applied;

[0017]FIG. 5 is a circuit diagram specifically showing examples of an Xdecoder, and a latch circuit and a word driver connected thereto, whichare employed in the dynamic RAM to which the present invention isapplied;

[0018]FIG. 6 is a circuit diagram illustrating one example of a matcontrol circuit employed in the dynamic RAM to which the presentinvention is applied;

[0019]FIG. 7 is a timing chart for describing one example of theoperation of the dynamic RAM to which the present invention is applied;

[0020]FIG. 8 is a block diagram showing examples of a memory array andits peripheral circuits employed in the dynamic RAM to which the presentinvention is applied;

[0021]FIG. 9 is a block diagram depicting examples of an input/outputinterface and a timing control circuit employed in the dynamic RAM towhich the present invention is applied;

[0022]FIG. 10 is a fragmentary circuit diagram showing one example of amemory array employed in the dynamic RAM according to the presentinvention;

[0023]FIG. 11 is a cross-sectional view showing, as one example, adevice structure for describing the dynamic RAM according to the presentinvention;

[0024]FIG. 12 is a block diagram for describing one embodiment of asemiconductor integrated circuit device according to the presentinvention;

[0025]FIG. 13 is a block diagram for explaining another embodiment ofthe semiconductor integrated circuit device according to the presentinvention;

[0026]FIG. 14 is a circuit diagram showing one example of an X-systeminput unit employed in the dynamic RAM according to the presentinvention;

[0027]FIG. 15 is a timing chart for describing one example of theoperation of the X-system input unit shown in FIG. 14;

[0028]FIGS. 16A and 16B are respectively schematic structural sectionalviews showing examples of MOSFETs employed in the semiconductorintegrated circuit device according to the present invention;

[0029]FIG. 17 is a characteristic diagram illustrating the relationshipbetween a gate length of an N channel MOSFET and its threshold voltageto describe the present invention;

[0030]FIG. 18 is a characteristic diagram showing the relationshipbetween a peak current, a delay time of a switch MOSFET start signal andthe like;

[0031]FIG. 19 is a circuit diagram illustrating another embodiment ofthe present invention;

[0032]FIG. 20 is a timing chart for describing the operation of theembodiment shown in FIG. 19;

[0033]FIG. 21 is a system configurational view showing one example of aone-chip microcomputer to which the present invention is applied; and

[0034]FIG. 22 is a circuit diagram illustrating a portion of the circuitshown in FIG. 14 by MOSFETs.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0035] Preferred embodiments of the present invention will hereinafterbe described with reference to the accompanying drawings.

[0036]FIGS. 1 and 2 are block diagrams showing one embodiment of adynamic RAM to which the present invention is applied. FIG. 1principally illustrates an input unit, an X-system circuit and an arrayblock. FIG. 2 shows a Y-system and write circuit and an output buffer.In the same drawings, signal transfer paths employed in the presentdynamic RAM do not faithfully correspond to signal transfer paths asdescribed in the normal circuit blocks to provide easy understanding ofthe present invention. Further, the same drawings are mainly plottedfrom the viewpoint of the supply of an operating voltage to each circuitblock.

[0037] The dynamic RAM according to the present embodiment is roughlydivided into circuits each placed in a state of being supplied with apower source at all times from the relationship with the outside, forexample, as in an input unit and an output (circuit) unit such; as theoutput buffer or the like, and internal circuits other than the circuitsreferred to above. Therefore, the respective circuits, which constitutethe above-described input unit, and an output circuit typified by theoutput buffer and a circuit having the need for a memory operation, ofthe internal circuits, are respectively electrically connected to asource voltage VCC supplied from an external terminal and a circuitground potential VSS.

[0038] On the other hand, each internal circuit for forming a low-leveloutput signal when a memory in a CMOS circuit is in a non-operatingstate, in other words, in a standby state to reduce a subthresholdleakage current, has a source voltage side electrically connected to subpower lines or sub voltage interconnections or wires (first internalpower line). Further, each internal circuit for forming a high-leveloutput signal has a ground side electrically connected to subgroundlines (second internal power line).

[0039] In the present embodiment, the internal circuits are roughlyclassified into a X-system circuit and a Y-system circuit to reduce apeak current at the time of the supply of the voltage to theabove-described each internal power line without sacrificing asubstantial operating speed. This is because they are different inoperating timing from each other. Further, the X-system circuit isfurther separated into two portions: an X-system circuit for forming aword line select signal and a portion (circuit portion) provided withinthe array block, for forming a word-line select signal.

[0040] The sub power lines are classified into VCTX, VCTA and VCTYaccording to the division of the internal blocks as described above, andthe subground lines are separated into VSTX, VSTA and VSTY. Although notrestricted in particular, a plurality of P channel switches MOSFETS QP1and QP2, and QP3 and QP4 are respectively provided in parallel formbetween the sub power line VCTX and the power line VCC and between thesub power line VCTA and the power line VCC. Although not limited inparticular, a plurality of N channel switches MOSFETs QN1 and QN2, andQN3 and QN4 are respectively provided in parallel form between thesubground line VSTX and the ground line (first main voltageinterconnection or wire) VSS and between the subground line VSTA and theground line VSS.

[0041] These P channel and N channel switches MOSFETs divided into thetwo are respectively supplied with control signals φXB and φX, and φABand φA. These control signals φXB and φX, and φAB and φA are shifted intiming provided to generate them. The control signals φXB and φX aregenerated in relatively quick timing in association with their operationsequences. The control signals φAB and φA are generated in relativelyslow timing.

[0042] The control signal φXB is not supplied commonly to the gates ofthe P channel switches MOSFETs QP1 and QP2, which are provided betweenthe sub power line VCTX and the power line (second main voltageinterconnection or wire) VCC associated with the above-describedX-system circuit and which are connected to one another in parallelform. Namely, the control signal φXB is supplied to the MOSFET QP1corresponding to the input side and a signal obtained by delaying thesame control signal through a delay circuit (control circuit) 17 a issupplied to the MOSFET QP2 corresponding to the output side. In the samedrawing, the two switches MOSFETs QP1 and QP2 are typically illustratedby way of example. However, the X-system circuit is composed ofmultistage logic circuits which constitute an X predecoder 6, a matselect circuit 7, an X address comparator 8 for making a comparisonbetween redundant addresses, a mat control circuit 9, etc.

[0043] The sub power line VCTX for supplying an operating voltage tothese logic circuits extends along a circuit area where it is formed.Therefore, a number of switch MOSFETs as in the switches MOSFETs QP1 andQP2 are provided in parallel form between the sub power line VCTX andthe power line VCC so as to provide a desired current supply ability bytheir composite conductance. In other words, one switch MOSFET is formedinto a relatively small size in such a manner that the current supplyability required to activate the X-system circuit can be shared betweenthe plurality of MOSFETs and realized by them.

[0044] In the same manner as described above, the control signal φX isnot supplied commonly to the gates of the N channel switches MOSFETs QN1and QN2, which are provided between the subground line VSTX and theground line VSS associated with the above-described X-system circuit andwhich are connected to one another in parallel form. Namely, the controlsignal φX is supplied to the MOSFET QN1 corresponding to the input sideand a signal obtained by delaying the same control signal through adelay circuit 17 c is supplied to the MOSFET QN2 corresponding to theoutput side. Even in the case of the switches MOSFETs QN1 and QN2 in amanner similar to the MOSFETs QP1 and QP2, a number of MOSFETs areprovided in parallel form between the subground line VSTX and the groundline VSS so as to provide a desired current supply ability by theircomposite conductance.

[0045] Such a switch MOSFET division can bring about the followingadvantages. One of them is that since the switches MOSFETs arerespectively dispersed and formed between the power line VCC and the subpower line VCTX and between the subground line VSTX and the ground lineVSS, the degree of freedom of the layout of these MOSFETs can beincreased. Namely, the degree of freedom thereof can be realized bysuitably providing relatively small MOSFETs within spaces definedbetween the former two lines and between the latter two lines. Bysuccessively activating these MOSFETs in a domino mode, they can bedirectly driven by relatively small inverter circuits or invertersrespectively constituting the delay circuits 17 a and 17 c, so that adrive current supplied to the gate of each switch MOSFET is dispersed soas to control or suppress the peak current.

[0046] Similarly, since the switches MOSFETs are reduced in size, thevalue of current that flows when each switch MOSFET is turned on, isrendered relatively small, and the switches MOSFETs are successivelyturned on in the domino mode, the current, which flows in each internalcircuit in the X-system circuit, can be also dispersed on a time basisso as to suppress the peak current. By determining the order ofactivating the MOSFETs in the domino mode in line with a signal transfermode, the signal can be transferred with satisfactory efficiency by lesscurrent as will be described later.

[0047] The P channel switches MOSFETs QP3 and QP4 provided between thesub power line VCTA and the power line VCC provided so as to correspondto the array block, and the N channel switches MOSFETs QN3 and QN4provided between the subground line VSTA and the ground line VSS arealso configured in the same manner as described above. Further, theswitches MOSFETs QP3 and QP4 and QN3 and QN4 are switch-controlled on astepwise basis by the control signals φAB and φA generated with thedelay and delay signals produced by delay circuits 17 b and 17 d.

[0048] The array block comprises an X decoder 12, a memory array 15, aword driver 13 and a sense amplifier 14. One memory mat is composed of acombination of the memory array 15, the X decoder 12 and the senseamplifier 14 and hence a plurality of memory mats are provided as awhole. Therefore, the X decoder 12 associated with a memory mat selectedby the mat control circuit is activated to thereby select a pair of wordlines in its corresponding memory array 15. Thereafter, the storedinformation read into a pair of bit lines by the selection of the pairof word lines is amplified by the corresponding sense amplifier 14.

[0049] In the present embodiment, in order to ensure a relatively largecurrent required to perform the operation of amplification of each senseamplifier, a common source switch 16 for forming a signal for activatingthe sense amplifier is not electrically connected to the sub power lineVCTA and the subground line VSTA described above but is electricallyconnected directly to the power line VCC and the ground line VSS. Thisis similar even to the output buffer which needs the flow of a largeoutput current.

[0050] The sub power line VCTY and the subground line VSTY are providedso as to correspond to the Y-system and write circuit. Although notlimited in particular, a single P channel switch MOSFET QP5 is providedbetween the sub power line VCTY and the power line VCC. Although notrestricted in particular, a single N channel switch MOSFET QN5 isprovided between the subground line VSTY and the ground line VSS. Eachof the switch MOSFETs QP5 and QN5 is formed in a relatively large sizeso as to provide the flow of current required to activate the Y-systemand write circuit.

[0051] However, control signals φYB and φY are set so that their risingedges are unsharpened to suppress a peak current for driving each switchMOSFET and a peak current at the time that each switch MOSFET is turnedon. As the simplest method, may be mentioned a method of forming thecontrol signals φYB and φY by a drive circuit such as an inverter or thelike having only such small conductance as to increase the time constantof a gate capacitor of each of the switches MOSFETs QP5 and QN5 formedinto the relatively large sizes.

[0052] Since the current required to vary a gate voltage supplied toeach of the gates of the MOSFETs QP5 and QN5 is less provided and theMOSFETs QP5 and QN5 are gently brought into an on state owing to theadoption of such a construction, the peak value of the current suppliedto each of the sub power line VCTY and the subground line VSTY can besuppressed. Thus, when the above construction is applied to the Y-systemcircuit, a relatively long time exists until the Y-system circuit isactivated since a low address strobe signal RASB is rendered low inlevel and thereby a memory access is started. Therefore, the switchesMOSFETs can be set so as to have a current supply ability necessary forthe above operation after the elapse of a desired time in such a simpleconfiguration that each power switch MOSFET is driven by an invertercircuit having a low current supply ability.

[0053] In the Y-system and write circuit, an address signal variationdetector ATD detects a change in Y address signal and starts anequalizing signal generator 26 and a main amplifier control circuit soas to equalize an input node of a main amplifier and control theoperation of amplification of the main amplifier. Each circuit block YB1is electrically connected directly to the power line VCC and the groundline VSS without being electrically connected to the sub power line VCTYand the subground line VSTY to stabilize its operation.

[0054] Other circuit blocks in the Y-system and write circuit areelectrically connected to the sub power line VCTY and the subground lineVSTY. Of these circuits, reference numerals 28, 33, 29, 30, 31, 32, 34and 36 respectively indicate a Y predecoder, a Y decoder, a Y addresscomparator for making a comparison between redundant addresses, a mainamplifier, a write buffer control circuit, a write buffer, a vender testcircuit, and a Dout buffer control circuit.

[0055] The input (circuit) unit for receiving therein a signal inputtedfrom an external terminal is regularly supplied with operating voltagesthrough the power line VCC and the ground line VSS to ensure a responseto the input signal supplied from the external terminal. Further, theoutput buffer for forming an output signal is regularly supplied withthe operating voltages through the power line VCC and the ground lineVSS to stably provide the output signal.

[0056] The input unit is provided, as an X system, with a RAS inputbuffer 1, a clock generator 2 for producing a RAS clock signal inresponse to a signal outputted from the RAS input buffer 1, an addressinput buffer 3 supplied with an address signal, an X address latch 4 fortaking in the address signal in response to the RAS clock signal R1B,and a CBR counter 5 for producing an address signal used for a refreshoperation.

[0057] The input unit includes, as a Y system, a CAS input buffer 18, aclock generator 19 for producing a CAS clock signal in response to asignal outputted from the CAS input buffer 18, and a Y address latch 20for capturing a Y address signal inputted from the address input buffer3 in response to the CAS clock signal. In addition to the components,the input unit has an output enable input buffer 22, a write enableinput buffer 23 and a data input buffer 24.

[0058]FIG. 3 is a circuit diagram showing one example of the X-systemaddress input unit. An address signal IAYa is of a refresh addresssignal formed by the CBR counter 5 shown in FIG. 1. An address signalRAaB is of an X-system address signal supplied from the externalterminal. These two address signals are supplied to their correspondinginputs of clocked inverter circuits CN1 and CN2. A refresh controlsignal IRF is brought to a high level upon refresh operation to therebyactivate the clocked inverter circuit CN1 and bring the clocked invertercircuit CN2 into an output high impedance, whereby the refresh addresssignal IAYa is captured. When the refresh signal IRF is low in level,the clocked inverter circuit CN1 is brought to an output high impedanceand the clocked inverter circuit CN2 is brought into an operation state,whereby the row-system address signal RAaB supplied from the externalterminal is captured.

[0059] Outputs produced from the two clocked inverter circuits CN1 andCN2 are commonly used and transmitted to a through latch via an invertercircuit. The through latch comprises an input clocked inverter circuitCN3, an inverter circuit IV3 and a feedback clocked inverter circuitCN4. A timing signal XAE0 is of a row-system timing signal and is usedto allow the through latch to perform a latch operation. Namely, whenthe timing signal XAE0 is low in level, the input clocked invertercircuit CN3 is activated so that the feedback clocked inverter circuitCN4 is brought to an output high impedance. Therefore, the addresssignal RAaB inputted from the external terminal or the refresh addresssignal IAYa is captured through the input clocked inverter circuit CN3.

[0060] When the level of the timing signal XAE0 is changed from the lowlevel to the high level, the input clocked inverter circuit CN3 isbrought to an output high impedance and alternatively, the feedbackclocked inverter circuit CN4 is brought into an operating state.Therefore, a signal outputted from the inverter circuit IV3 is fed backto the input side so that the captured address referred to above islatched in the through latch. Signals produced from the through latchare outputted as complementary internal address signals BXaB and BXaTthrough NOR gate circuits and inverter circuits. The NOR gate circuitsrespectively open their gates during a period in which the timing signalXAE0 is high in level to thereby output the complementary internaladdress signals BXaB and BXaT corresponding to the latched addresssignal. When the timing signal XAE0 is in a standby state of beingbrought to a low level in contrast with this, the internal addresssignals BXaB and BXaT are both fixed to a high level and respectivesignals at the subsequent logic stages are respectively fixed to apredetermined signal level without reference to the previous memoryaccess.

[0061]FIG. 4 is a circuit diagram showing one example of the predecoderwhich receives the internal address signals therein. Although notrestricted in particular, complementary internal address signals BX2Bi,BX2Ti through BX4Bi and BX4Ti captured by the address input unitreferred to above are captured through NAND gate circuits whose gatesare controlled based on a testing control signal TASWTD. Eight predecodeoutputs AX20Bi through AX27Bi are produced from NAND gate circuits byutilizing the complementary internal address signals BX2Bi, BX2Tithrough BX4Bi and BX4Ti composed of three bits in combination.

[0062] The predecode outputs are respectively outputted through twocascade-connected inverter circuits used as output buffers. T in eachsignal referred to above indicates non-inversion (true) and B in eachsignal indicates inversion (bar). An explanation of the testing controlsignal TASWTD will be omitted because it has no immediate connectionwith the present invention. However, when the testing control signalTASWTD is rendered high in level, the gates of the NAND gate circuitsare closed so that the signals inputted to the respective NAND gatecircuits that constitute the predecoder, are all brought to a high levelwithout reference to the address signals BX2Bi, BX2Ti through BX4Bi andBX4Ti.

[0063] Since all the internal address signals BXaB and BXaT are fixed tothe high level when the dynamic RAM is in the standby state, the signaloutputted from each NAND gate circuit in the input unit is rendered lowin level.

[0064] Since the input signal is rendered low in level, each NAND gatecircuit, which constitute the decoder, fixes its output signal to a highlevel. Further, since a high level is supplied to the input of thepreceding stage of each of two CMOS inverter circuits used for output, asignal outputted from the preceding stage is rendered low in level and asignal outputted from the subsequent stage thereof is rendered high inlevel.

[0065] Thus, the signal levels of the respective internal logic stagesare fixed as described above in a non-operating state. Therefore, inorder to reduce the subthreshold leakage current described above, thefirst-stage NAND gate circuits are electrically connected to the groundline VSS in turn according to a signal transfer direction to produce thelow-level output signals, whereas the power sides thereof areelectrically connected to the sub power line VCTX. Since the P channelMOSFETs QP1 and QP2 and the like shown in FIG. 1, which are connected tothe power line VCC when being in the non-operating state, are turnedoff, the sub power line VCTX serves so as to reduce the subthresholdleakage current that flows through the turned-off P channel MOSFETsconstituting each NAND gate circuits referred to above.

[0066] Since the P channel MOSFETs and N channel MOSFETs of each CMOScircuit, which constitute each logic stage referred to above, areoperated at high speed as will be described later, the thresholdvoltages thereof are lowered. On the other hand, the switch MOSFETs QP1,QP2, etc., which constitute the power switch referred to above, are setso that their threshold voltages are relatively increased, to therebysubstantially prevent the flow of the subthreshold leakage current atthe time that they are off.

[0067] Second-stage NAND gate circuits are respectively electricallyconnected to the power line VCC to produce high-level output signals inresponse to the low-level input signals supplied from the outputs of thefirst-stage NAND gate circuits. However, the ground sides thereof arerespectively electrically connected to the subground line VSTX. Sincethe N channel MOSFETs QN1, QN2 and the like shown in FIG. 1, which areelectrically connected to the ground line VSS when they are in thenon-operating state, are turned off, the subground line VSTX serves soas to reduce the subthreshold leakage current flowing through theturned-off N channel MOSFETs that constitute the NAND gate circuits. Ina manner similar to the above, the switch MOSFETs QN1, QN2, etc., whichconstitute the power switch, are set so that their threshold voltagesbecome great relatively. As a result, the subthreshold leakage currentat the time that they are off, is substantially prevented from flowing.

[0068] Subsequently, each three-stage CMOS inverter circuit is activatedby the VCTX and VSS in a manner similar to the first-stage NAND gatecircuits. Each fourth-stage CMOS inverter circuit is activated by theVCC and VSTX in a manner similar to the second-stage NAND gate circuits.It is thus possible to reduce the subthreshold leakage current thatflows when they are in a non-operating state.

[0069]FIG. 5 is a specific circuit diagram showing examples of the Xdecoder, a latch connected to the X decoder and a word driver. Althoughnot restricted in particular, symbols AX20 through AX27 respectivelyindicate signals produced by predecoding address signals A2 through A4composed of three bits with the above-described predecoder. Further,symbols AX50 through AX57 respectively indicate signals produced bypredecoding address signals A5 through A7 composed of three bits with apredecoder similar to the above predecoder. Each MOSFET Q3 whose gate issupplied with one of the predecoded signals AX20 through AX27 and eachMOSFET Q4 whose gate is supplied with one of the predecoded signals AX50through AX57, are electrically directly connected to one another so asto constitute the X decoder, which is supplied with a select timingsignal XDGB.

[0070] The X decoder is composed of a dynamic logic circuit. The Xdecoder is constructed so that a P channel precharge MOSFET Q1switch-controlled by a precharge signal XDP and the MOSFETs Q3 and Q4constituting each logic block are connected in series. Namely, aselect/non-select decode signal is formed depending on whether or not anode precharged to a high level by the precharge MOSFET Q1 is dischargedthrough the MOSFETs Q2, Q3 and Q4 in response to a low level of thetiming signal XDGB.

[0071] The latch comprises an inverter IV1 and the P channel MOSFET Q2provided between the input of the inverter IV1 and a power terminal VCCand controlled by a signal XDGE outputted from the inverter IV1. TheMOSFET Q2 forms a positive feedback circuit in response to thenon-select level corresponding to the low level. The MOSFET Q2 preventsa non-select word line from being selected by the inversion of the levelat the above node due to the leakage current upon turning off of theMOSFETs Q3 and Q4.

[0072] Although not restricted in particular, the output signal XDGE ofthe inverter IV1 is of a select signal associated with four word linesWL0 through WL3. Of these four word lines WL0 through WL3, one word lineis selected which is specified or designated by four word line selecttiming signals X0MB through X3MB produced by decoding address signals A0and A1 of low-order bits and adding the select timing signal to them.

[0073] Namely, when the output signal XDGE of the latch is of a selectlevel corresponding to a high level, a MOSFET Q5 is turned on. When theword line select timing signal X3MB is changed from a high to a lowlevels, a low-level input signal is supplied to a word driver composedof a P channel MOSFET Q6 and an N channel MOSFET Q7 activated by abooster or step-up voltage VCH and hence a word line WL3 connected totheir output terminals is raised from the low level to a high levelcorresponding to the step-up voltage VCH.

[0074] When the output signal XDGE of the latch is of the select levelcorresponding to the high level, other MOSFETs are also turned ontogether with the MOSFET Q5. However, since the word line select timingsignals X0MB through X2MB remain at the high level, the N channel MOSFETof the word driver is turned on so as to cause each of the word linesWL0 through WL2 to remain in a non-selected state indicative of a lowlevel. A P channel MOSFET Q8 is used as a latch MOSFET placed in thenon-select level. When the word line WL3 is in the non-select low level,the P channel MOSFET Q8 is turned on to thereby bring an input terminalof the word driver to the step-up voltage VCH so as to turn off the Pchannel MOSFET Q6. A P channel MOSFET Q9 is used as a precharge MOSFET.The P channel MOSFET Q9 is turned on in response to a low level of aprecharge signal WPH so that the input terminal of the word driver isprecharged to VCH.

[0075] When the output signal XDGE of the latch is of a non-select levelcorresponding to a low level, MOSFETs typified by the MOSFET Q5 are heldoff. Thus, even if either one of the word line select timing signalsX0MB through X3MB is changed from the high to low levels, the P channelMOSFET Q8 is turned on in response to the low levels of the word linesWL0 through WL3 each associated with the precharge level without beingresponsive to its change. As a result, the latch that the high levelcorresponding to the VCH is fed back, is exerted on the input terminalof the word driver so that each of the word lines WL0 through WL3 or thelike is maintained at the non-selected state.

[0076] Since the amplitude of the signal inputted to the word drivercomposed of, for example, the MOSFETs Q6 through Q9 operated by thestep-up voltage VCH corresponding to the select level of each word lineis increased as in the circuits employed in the present embodiment, thethreshold voltage is relatively raised as in the power switches MOSFETsQP1, QN1, etc. Therefore, since the subthreshold leakage current at theturning off of the word driver can be substantially brought to naught,the MOSFETs are directly connected to the ground line VSS even in thesense of stabilization of the select/non-select level of each word line.However, since the inverter IV1 is reduced in signal amplitude in amanner similar to the predecoder and the input signal thereof may simplybe fixed to a high level as compared with the precharge signal XDP uponnon-selection of the word line so as to form or produce a low-leveloutput, the inverter IV1 may be connected to the ground line VSS and thesub power line VCTA.

[0077] A word driver, a latch MOSFET and a precharge MOSFET similar tothose referred to above are connected even to a redundant word lineRWL0. The redundant word line RWL0 is selected in synchronism with thetiming signal XDGB and a redundant word line select signal XR0B producedby a redundant circuit composed of an unillustrated fuse circuit forstorage of defective addresses and an address comparator for comparingeach defective address and an input X address. Since, at this time, theAX20 through A27 and AX50 through AX57 produced from the predecodercorresponding to a normal circuit or the word line select timing signalsX0MB through X3MB are brought to the non-select level, based on adefective-address comparison coincidence signal, no defective word lineis selected.

[0078] Although not restricted in particular, the memory array employedin the present embodiment is divided into a plurality of memory mats aswill be described later. Sense amplifiers SA, precharge circuits PC andinput/output lines are provided on both sides of each memory mat MAT.Although not restricted in particular, the sense amplifiers associatedwith odd-numbered complementary bit lines and even-numberedcomplementary bit lines are distributed to both sides to match thepitches of complementary bit lines disposed so as to intersect at rightangles to the word lines WL0 through WL3 or the like with the pitches ofthe sense amplifier and the precharge circuit. Owing to the placement ofsuch sense amplifiers SA, one sense amplifier can be placed at a pitchcorresponding to twice the pitch of each of the complementary bit lines.

[0079] Although not restricted in particular in the present embodiment,each sense amplifier is set to a shared sense amplifier system. SignalsSHL and SHR are of shared select signals. Although the left and rightsides are reversed at one view in the same drawing, the memory mat inthe same drawing is disposed on the left side as viewed from theright-side sense amplifier SA if the sense amplifier SA is considered asthe center. Therefore, the select signal like SHL is supplied to thememory mat. Since the memory mat shown in the same drawing is disposedon the right side as viewed from the left-side sense amplifier SA, theselect signal like SHR is supplied to the memory mat.

[0080]FIG. 6 is a circuit diagram of one example of the mat controlcircuit. High-order address signals are decoded to produce or form matselect signals MS000, MS001 and MS002, for example. The memory mat MATshown in FIG. 5 is selected by the mat select signal MS001. The matselect signal MS001 is supplied to four NAND gate circuits through twoinverters connected in tandem. The four NAND gate circuits arerespectively supplied with timing signals x0 through x3 obtained bycombining the decode signals formed by decoding the address signals A0and A1 with the word line select timing signals. Thus, the word lineselect timing signals X0MB through X3MB are produced from the outputs ofthe NAND gate circuits. This means that the predecode signals AX20through AX27, AX50 through AX57 and the timing signals x0 through x3 arecommonly used to the plurality of memory mats.

[0081] The precharge signals XDP and WPH and the operation timing signalXDGB of the row decoder are formed by combining the mat select signalMS001 with X-system timing signals R1 and R2. Since the precharge signalWPH is used as a signal supplied to the gate of each P channel MOSFEToperated based on the step-up voltage VCH, the precharge signal WPH isconverted into a level by a level converter circuit and the convertedlevel signal is outputted through an inverter activated by the step-upvoltage VCH. The mat select signals MS000 and MS002 each having theamplitude of such a signal as the source voltage VCC are by-levelconverted into signal amplitude corresponding to the step-up voltage VCHby the level converter circuit, whereby the shared select signals SHRand SHL are formed.

[0082] Even in the case of the mat control circuit, since the inputsignals R1 and R2 and MS001 through MS002 and the like are respectivelyfixed to a low level upon its non-operation as described above and areused to form high-level output signals, the mat control circuit isactivated by the power line VCC and the subground line VCTX in the samemanner as described above. Since second-stage CMOS inverter circuits arereversely supplied with high-level input signals to form low-leveloutput signals, the second-stage CMOS inverter circuits are electricallyconnected to the sub power line VCTX and the ground line VSS.Subsequently, third-stage NAND gate circuits are activated by the powerline VCC and the subground line VCTX in the same manner as describedabove. Since the signals x0 through x3 are fixed to a high level upondeactivation of the mat control circuit, the third-stage NAND gatecircuits are activated correspondingly by the VCTX and VSS in accordancewith the above-described method. Further, the NAND gate circuitssupplied with the output signals thereof are activated by the VCC andVSTX.

[0083]FIG. 7 is a timing chart for explaining one example of theoperation of the dynamic RAM shown in FIGS. 1 and 2. The row addressstrobe signal RASB is changed from the high to low levels to start thememory access. When the output signal R0B of the RAS input buffer 1 ischanged from a high to a low levels, the RAS clock generator 2 changesthe typical row-system timing signal R1B from a high to a low levels inresponse to its change. With the change of the timing signal R1B to thelow level, the address signal Ai inputted from the address buffer 3 iscaptured or loaded into the X address latch 4 as an X address signal.

[0084] With the change of the timing signal R0B to the low level, thecontrol signal φX of the power switch is changed from the low to highlevels and the control signal φXB is changed from the high to lowlevels. Thus, the supply of the source voltage VCC to the sub power lineVCTX is started by the turning on of the switch MOSFET QP1 and thesupply of the ground potential VSS to the subground line VSTX is startedby the turning on of the switch MOSFET QN1. Namely, the supply of thevoltages to the sub power line VCTX and the subground line VSTX iscarried out simultaneously and concurrently with the operations of theRAS clock generator 2 and the X address latch 4.

[0085] Thus, when an internal address signal X0 is generated inassociation with the latch operation of the X address latch 4, at leastthe input-stage logic circuits of the respective circuits of the Xpredecoder 6, mat select circuit 7 and X address comparator 8 aresubstantially supplied with the source voltage VCC owing to the turningon of the switch MOSFET QP1. Further, the subground line VSTX issubstantially supplied with the ground potential VSS owing to theturning on of the switch MOSFET QN1. Thus, signals responsive to thesupplied voltages are formed without interfering with a substantialoperation. In association with the transfer of the signals from thelogic stages in the X predecoder 6 and the mat select circuit 7,potentials necessary for operation are successively supplied to the subpower line VCTX and the subground line VSTX by the switch MOSFETsstepwise-activated successively in their signal transfer directions, sothat predecode signals X1 and X2 and a mat select signal X3 are formed.

[0086] The control signals φA and φAB are respectively changed to a highlevel and a low level with lags behind the control signals φX and φXB tothereby start the supply of the source voltage VCC to the sub power lineVCTA for the array block and the supply of the ground potential VSS tothe subground line VSTA for the array block. Since the timing providedto output the predecode signal X1 formed in the above-described X-systemcircuit and an output signal X4 of the mat control circuit 9 makes leadtime, the sub power line VCTA and the subground line VSTA used for thearray block are respectively set to desired potentials.

[0087] Thus, in the array block, one word line WORD is raised to thehigh level from the low level in response to a select signal X5 producedfrom the X decoder 12. Thereafter, the common source switch 16 is turnedon in response to the change of a sense amplifier activation signal S0to a low level to thereby respectively vary common sources SP and SN ofeach sense amplifier to a high level and a low level. As a result, amicrosignal is read into its corresponding complementary bit lines ofthe memory array and thereafter the operation for amplification of themicrosignal is started.

[0088] A column address strobe signal CASB is changed from a high to alow levels to capture a Y-system address signal. Namely, when the outputsignal of the CAS input buffer 18 is changed from a high to a lowlevels, the CAS clock generator 19 generates an address take-in orcapturing timing signal in response to its change to thereby allow the Yaddress latch 20 to capture the address signal A1 inputted from theaddress input buffer 3 therein as a Y address signal.

[0089] The address signal Y1 taken in the Y address latch 20 is suppliedto the Y predecoder 28 and the Y address comparator 29. An addresssignal Y0 is supplied to the address variation detector 25 from which anaddress variation detection signal C0 is generated. In response to thesignal C0, the equalizing pulse generator 26 generates an equalize pulseC1 to equalize the input signal supplied to the input terminal of themain amplifier 30. In response to the signal C0 and the timing signaloutputted from the CAS clock generator 19, the main amplifier controlcircuit 27 generates a main amplifier control signal C2.

[0090] Since the Y decoder 33 generates a Y select signal in response toa predecode signal Y2, a read signal D0 is transferred to the inputterminal of the main amplifier 30 and a signal D1 obtained by amplifyingthe read signal D0 with the main amplifier 30 is transferred to theoutput buffer 37 through a data selector 35 as an input signal D2therefor. The output buffer 37 is activated by a timing signal C3outputted from the Dout buffer control circuit 36 to transmit outputdata DATA therefrom.

[0091] In a write mode, a write clock generator 21 judges or determinesthat a signal outputted from the write enable input buffer 23 is low inlevel. As a result, the write buffer 32 is activated so that datainputted from the data input buffer 24 is transferred to thecomplementary bit lines of the memory array, which are selected by the Yselect signal.

[0092] The control signals φY and φYB associated with the Y-system andwrite circuit are respectively slowly varied to a high level and a lowlevel in suitable timing in the course of the select operation of theX-system referred to above. Therefore, the switch MOSFETs QP5 and QN5respectively connected to the sub power line VCTY and the subground lineVSTY associated with the Y-system and write circuit are set so as tohave desired current supply abilities with timing provided to start theoperations of the respective circuits of the Y-system while currentsoutputted from the switch MOSFETs QP5 and QN5 are being increased slowlyaccording to gentle changes in their gate voltages.

[0093] The sub power lines VCTX, VCTA and VCTY and subground lines VSTX,VSTA and VSTY, which are respectively divided into the three asdescribed above, are respectively substantially brought into a floatingstate upon their non-operating states. In this condition, the controlsignals φX and φXB, φA and φAB, and φY and φYB are respectivelysuccessively generated with delays upon the memory access while thesubthreshold leakage current produced in each logic circuit is beingsuppressed. Since the drive current required to vary the voltage appliedto the gate of each of the switches MOSFETs respectively controlledbased on the control signals φX and φXB, φA and φAB, and φY and φYB, andthe supply current required to vary the voltages at the sub power linesVCTX, VCTA and VCTY and the subground lines VSTX, VSTA and VSTY to adesired voltage slowly increase in terms of the time, the occurrence ofthe peak current is suppressed and the influence of the currents on theoperating speeds of the respective circuit blocks can be substantiallyavoided.

[0094]FIGS. 8 and 9 are respectively block diagrams showing oneembodiment of the dynamic RAM to which the present invention is applied.FIG. 8 shows a memory array and its peripheral selection circuits. FIG.9 illustrates an input/output interface such as an address buffer, aninput/output buffer or the like, and a timing control circuit.

[0095] Referring to FIG. 8, a sense amplifier SA01 is provided so as tobe interposed between two memory mats MMATO and MMAT1. Namely, the senseamplifier SA01 serves as a shared sense amplifier used selectively forthe two memory mats MMAT0 and MMAT1. An input/output portion of thesense amplifier SA01 is provided with an unillustrated select switch andelectrically connected to complementary bit lines (or also called“complementary data lines or complementary digit lines”) of the memorymat MMAT0 or MMAT1.

[0096] Other memory mats MMAT2 and MMAT3, MMAT4 and MMAT5 and MMAT6 andMMAT7 are respectively provided in pairs and provided with senseamplifiers SA23, SA45 and SA67 in common. A single memory array MARY0 iscomposed of a total of eight memory mats MMAT0 through MMAT7 and thefour sense amplifiers SA01 through SA67 referred to above. A Y decoderYDEC is provided for the memory array MARY0. A memory array MARY1 isprovided symmetrically with respect to the memory array MARY0 with the Ydecoder YDEC interposed therebetween. Although an internal configurationof the memory array MARY1 is omitted, the memory array MARY1 is similarin configuration to the memory array MARY0.

[0097] Decoders XD0 through XD7 are provided with respect to the memorymats MMAT0 through MMAT7 respectively. These decoders XD0 through XD7respectively decode a signal AXi outputted from a predecoder XPD toproduce or form four word line select signals. Word drivers WD0 throughWD7 for producing or forming word line select signals, based on signalsoutputted from the decoders XD0 through XD7 and signals outputted frommat control circuits MATCTRL01 through MATCTRL67 to be next describedare provided. Word drivers corresponding to spare or reserve word linesfor defective relief are also included in the word drivers.

[0098] The mat control circuit MATCTRL01 is provided with respect to thepair of memory mats MMAT0 and MMAT1. Similarly, the mat control circuitsMATCTRL23, MATCTRL45 and MATCTRL67 are respectively provided even withrespect to other pairs of memory mats MMAT2 and MMAT3, MMAT4 and MMAT5,and MMAT6 and MMAT7. The mat control circuits MATCTRL01 throughMATCTRL67 are activated in response to a mat select signal MSi, a signalXE, a sense operation timing signal φSA and signals obtained by decodingaddress signals of the two rightmost bits. Of these, one mat controlcircuit relative to the selected memory mat outputs a signal XiB or thelike for selecting one of the four word lines.

[0099] Otherwise, each of the mat control circuits MATCTRL01 throughMATCTRL67 outputs a select signal for holding ON a bit line selectswitch corresponding to either of the left and right memory mats inassociation with the selected memory mat referred to above and turningOFF bit line select switches associated with the non-selected memorymats, and a timing signal for starting the amplifying operation of eachsense amplifier. Further, each of the mat control circuits has thefunction of controlling either one or both of each sense amplifier andeach bit line select switch upon standby at a refresh operation to bedescribed later to thereby bring each bit line into the floating state.

[0100] Since the output of the select signal XiB or the like isprohibited based on a low level of the signal XE when an access to adefective word line is performed, the operation for selecting thedefective word line is stopped. On the other hand, since a select signalXRiB on the redundant circuit side is formed, the reserve word line isplaced in a selected state.

[0101] Referring to FIG. 9, a timing control circuit TG determines anoperation mode in response to a row address strobe signal /RAS, a columnaddress strobe signal /CAS, a write enable signal /WE and an outputenable signal /OE supplied from an external terminal, andcorrespondingly forms or produces various timing signals necessary forthe operation of each internal circuit. In the same drawing, symbol /means that a low level is an active level.

[0102] Signals R1 and R3 are of row-system internal timing signals andare used for a row-system select operation to be described later. Thetiming signal φXL is used as a signal for capturing a row-system addressand holding it and is supplied to a row address buffer RAB. Namely, therow address buffer RAB captures addresses inputted from addressterminals A0 through Ai in response to the timing signal φXL and causesa latch to store the same therein.

[0103] The timing signal φYL is used as a signal for capturingcolumn-system addresses and causing a latch to hold the same therein andis supplied to a column address buffer CAB. Namely, the column addressbuffer RAB takes in the addresses inputted from the address terminals A0through Ai in response to the timing signal φYL and causes the latch tostore them therein.

[0104] The signal φREF is of a signal generated upon a refresh mode andis supplied to a multiplexer AMX connected to an input portion of therow address buffer. The multiplexer AMX is controlled based on thesignal φREF so as to select a refresh address signal formed by a refreshaddress counter RFC. The refresh address counter RFC counts a refreshstepping pulse φRC produced by the timing control circuit TG to therebygenerate the refresh address signal. The present embodiment isconstructed so as to have auto-refresh and self-refresh to be describedlater.

[0105] The timing signal φX is of a row or word line select timingsignal and is supplied to a decoder XIB from which four word line selecttiming signals XiB are formed or produced based on the signals obtainedby decoding the address signals of the two rightmost bits. The timingsignal φY is of a column select timing signal and is supplied to acolumn-system predecoder YPD from which column select signals AYix, AYjxand AYkx are outputted.

[0106] The timing signal φW is of a control signal for providinginstructions for a write operation and the timing signal φR is of acontrol signal for providing instructions for a read operation. Thetiming signals φW and φR are supplied to an input/output circuit I/O.Upon the write operation, an input buffer included in the input/outputcircuit I/O is activated so that the output buffer is brought to anoutput high impedance. Upon the read operation on the other hand, theoutput buffer is activated to bring the input buffer to an output highimpedance.

[0107] The timing signal φMS is of a signal for providing instructionsfor a mat select operation and is supplied to the row address bufferRAB. A mat select signal MSi is outputted in synchronism with thistiming. The timing signal φSA is used as a signal for providinginstructions for the operation of each sense amplifier. Based on thetiming signal φSA, the timing signal φMS is also used to form controlsignals for a precharge end operation of complementary bit lines and aseparate operation of bit lines on the non-selected memory mat side aswell as to form an activation pulse for each sense amplifier.

[0108] In the present embodiment, a row-system redundant circuit X-REDis typically shown by way of illustrative example. Namely, the abovecircuit X-RED includes a memory circuit for storing each defectiveaddress therein and an address comparator. The stored defective addressis compared with an internal address signal BXi outputted from the rowaddress buffer RAB. If they do not coincide with each other, then thesignal XE is brought to a high level and a signal XEB is brought to alow level to thereby make the operation of the normal circuit valid oreffective. When the input internal address signal BXi coincides with thestored defective address, the signal XE is rendered low in level toprohibit the select operation of each defective word line in the normalcircuit. Further, the signal XEB is rendered high in level to output theselect signal XRiB for selecting one reserve word line.

[0109] Although omitted in FIG. 9, a circuit similar to the row-systemcircuit is provided even within a column system. When a memory access toa defective bit line is detected by the circuit, the operation for theselection of the defective bit line by a column decoder YD is stoppedand instead a signal for selecting each of bit lines provided as sparesis formed.

[0110]FIG. 10 is a fragmentary circuit diagram showing one example ofthe memory array employed in the dynamic RAM according to the presentinvention. In the same drawing, four word lines and two pairs ofcomplementary bit lines in the memory mat MMAT0, a sense amplifierrelated to these, a precharge circuit, etc. are typically illustrated byway of example. The memory mat MMAT1 is shown as a black box. Circuitsymbols are typically added to MOSFETs that constitute individualcircuits associated with a pair of complementary bit lines BLL and /BLL.

[0111] A dynamic memory cell comprises address selection MOSFETs Qm andinformation storage capacitors Cs. The gate of one address selectionMOSFET Qm is electrically connected to a word line WL1. The drain of theMOSFET Qm is electrically connected to the bit line /BLL and theinformation storage capacitor Cs is electrically connected to the sourcethereof. Other electrodes of the information storage capacitors Cs arecommonly used and are supplied with a plate voltage VPL.

[0112] The pair of bit lines BLL and /BLL is disposed in parallel asshown in the same drawing and suitably intersect as needed to strike acapacity balance between the bit lines, for example. The complementarybit lines BLL and /BLL are electrically connected to an input/outputnode of each sense amplifier by switches MOSFETs Q1 and Q2. The senseamplifier is composed of N channel MOSFETs Q5 and Q6 whose gates anddrains are cross-connected and provided in latch form and P channelMOSFETs Q7 and Q8 whose gates and drains are cross-connected andprovided in latch form. The sources of the N channel MOSFETs Q5 and Q6are electrically connected to a common source line CSN. The sources ofthe P channel MOSFETs Q7 and Q8 are electrically connected to a commonsource line CSP. A power switch MOSFET Q14 for the P channel MOSFETs isconnected to the common source line CSP as shown by way of illustrativeexample. When a timing signal φSAP is rendered low in level, the MOSFETQ14 is turned on so as to supply a voltage required to activate eachsense amplifier. An unillustrated N channel MOSFET is connected to thecommon source line CSN associated with the N channel MOSFETs Q5 and Q6so as to supply a circuit ground potential for providing line operationtiming.

[0113] A precharge circuit composed of a MOSFET Q11 for short-circuitingthe complementary bit lines and switches MOSFETs Q9 and Q10 forsupplying a half precharge voltage HVC to the correspondingcomplementary bit lines is connected to the input/output node of eachsense amplifier. The gates of the MOSFETs Q9 through Q11 are commonlysupplied with a precharge signal PCB. MOSFETs Q12 and Q13 form a columnswitch switch-controlled in response to a column select signal YS. Inthe present embodiment, four pairs of bit lines can be selected by onecolumn select signal YS. Therefore, the column select signal YS issupplied commonly to the gates of switch MOSFETs constituting columnswitches connected to input/output nodes of four sense amplifiersassociated with the two pairs of bit lines illustratively shown in thesame drawing and the remaining unillustrated two pairs of bit lines. Thefour pairs of bit lines and the four pairs of input/output lines I/O arerespectively connected to one another through the switch MOSFETS.

[0114]FIG. 11 is a cross-sectional view showing, as one embodiment, adevice structure for describing the dynamic RAM according to the presentinvention. In the present embodiment, a device structure for the memoryarray and the peripheral portion referred to above is shown as a typicalone by way of illustrative example. In regard to the storage capacitorof each memory cell, a polysilicon layer SG corresponding to a secondlayer is used as a storage node and is electrically connected to thesource and drain of one of address selection MOSFETS. The polysiliconlayer is shaped as a fin structure and is formed by a plate electrodecomposed of a polysilicon layer TG corresponding to a third layer with athin gate insulating film interposed between the two layers. The gate ofeach address selection MOSFET is composed of a polysilicon layer FGcorresponding to a first layer. Other source and drain of each addressselection MOSFET are electrically connected to a metal interconnectionor wiring layer Ml corresponding to a first layer, such as aluminum orthe like with the FG, SG and TG interposed therebetween. Each bit lineis formed of the interconnection layer M1.

[0115] The peripheral portion is formed with two N channel MOSFETs. Themetal wiring layer M1 is electrically connected to the source and drainof each MOSFET by a contact LCNT. Alternatively, the metal wiring layerM1 is electrically connected to the polysilicon layer FG by a contactFCNT. The above-described metal wiring layer M1 and wiring layer M2 areelectrically connected to each other through a first through-hole TH1,and the wiring layer M2 and a wiring layer M3 corresponding to a thirdlayer are electrically connected to each other through a secondthrough-hole TH2. When an input signal is supplied to the gate electrodeof the MOSFET through the wiring layer M2, the input signal is taken inthe wiring layer M1 used as a dummy through the first through-hole TH1as described above and hence the input signal is introduced into thepolysilicon layer FG used as the gate electrode through the wiring layerM1 and the contact LCNT.

[0116] The wiring layer M3 for supplying the input signal iselectrically connected to the wiring layer M2 through the secondthrough-hole TH2. When an output signal is supplied to the next-stagecircuit, for example, the wiring layer M1 is electrically connected tothe wiring layer M2 used as a dummy through the first through-hole TH1.Thus, the output signal is introduced into the wiring layer M3 throughthe second through-hole TH2 with the wiring layer M2 interposed betweenthe wiring layers M1 and M3.

[0117] Since the complementary bit lines are half-precharged in thenon-operating state, a half precharge voltage is applied between thegate and source of each MOSFET as a reverse bias. Therefore, nosubthreshold leakage current occurs in each address selection MOSFET. Itis however considered that when each word line becomes a non-selectionlow level and the complementary bit lines are brought to VSS by theamplifying operation of each sense amplifier, the information chargestored at the high level loses or disappears due to the subthresholdleakage current.

[0118] If the subthreshold leakage current at such an address selectionMOSFET turns into a problem, then a channel length is made long and athreshold voltage is increased. Alternatively, well regions in whichmemory cells each composed of the address selection MOSFETS are formed,are separated from each other and a negative substrate back bias voltageis supplied to each well region to increase an effective thresholdvoltage. In order to separate only the well regions for forming thememory cells from each other and supply the substrate back bias voltagethereto, a semiconductor substrate is shaped in the known triple wellstructure. Namely, each of the N channel MOSFETs, which constitute theperipheral circuits such as the decoder, etc., needs to have the lowthreshold voltage as described above in order to increase the operatingspeed thereof. Each well region in which the N channel MOSFET is formed,is biased to the circuit ground potential VSS.

[0119] When a large circuit block is provided with a set of a sub powerline and a subground line alone, it is necessary to provide switchMOSFETs whose gate widths are large and reduce an on resistance of eachswitch MOSFET so as to provide the supply of current to the circuitblock. This is because when a voltage drop occurs in the sub power line,the threshold voltage of each of P channel MOSFETs constituting the samecircuit block increases equivalently and the lowering of speedup by theuse of each MOSFET whose threshold voltage is low, is canceled due toits increase. Similarly, this will happen even in the case of therelationship between the threshold voltage of each N channel MOSFET andthe on resistance of each MOSFET connected to the subground line.

[0120] It is thus necessary to reduce a voltage drop of the order ofseveral tens of mV at maximum with respect to the average operatingcurrent of the same circuit block with a view toward keeping the effectof speeding up its operation. In the dynamic RAM according to theprevious embodiment, for example, switch MOSFETs each having gate widthsranging from 5000 μm to 20000 μm are needed. It is thus necessary tocharge or discharge the capacitor of the gate large in width when eachswitch MOSFET is turned on.

[0121] It is desirable that the sub power line and the subground lineare used in a number of circuit blocks wherever practicable to reducecurrent consumption at the time of the non-operation as the entirecircuit. To cope with it, it is however necessary to turn on theabove-described power switch MOSFET in timing provided as quickly aspossible after the inputting of RASB. For example, the sum of the gatewidths of the MOSFETs connected to the power line VCC and the groundline VSS at the input unit becomes about 10000 μm, whereas the sum ofthe gate widths of the MOSFETs connected to the sub power line and thesubground line at the X predecoder and the mat select circuit reachesabout 15000 μm. Thus, whether or not the sub power line and thesubground line should be connected to the X predecoder and the matselect circuit, depends on the change of the leakage current at thenon-operation (deactivation) to the half the leakage current. It is thusimportant that each switch MOSFET is turned on before the X predecoderand the mat select circuit are started (before and after 5n secondsafter the inputting of RASB, for example).

[0122] Since it is necessary to charge or discharge the gate capacitorreferred to above in a short time, the sub power line and the subgroundline are provided in pair as the entire circuit and the P channel switchMOSFET and the N channel switch MOSFET are respectively provided by one.In doing so however, a large peak current, which falls within a range of0.5 A to 1.0 A, will flow when such switches MOSFETs are turned on. Whensuch a large peak current is superimposed on the operating currentflowing in each internal circuit, a large problem arises in terms oflong-term reliability due to disconnection or the like caused by noiseor a concentrated current.

[0123] As described above in the present embodiment, the concentrationof current on each switch MOSFET at the time of its switch control isdispersed on a time basis by dividing the sub power lines and thesubground lines into the three portions as a whole as described aboveand by making a difference between the timing provided to start eachMOSFET and the timing provided to operate each of the switches MOSFETsdivided in plural form, so as to stepwise activate each switch MOSFET.However, the peak current can be also controlled by simply collectivelyutilizing the sub power lines and the subground lines in common in theform of several blocks, providing the switch MOSFETs in plural form andsetting the difference between the start timings. In this case, thelayout of the sub power lines and the subground lines becomes easy ascompared with the case in which the sub power lines and the subgroundliens are divided into pieces between the blocks. Further, since the subpower lines and the subground lines also increase in parasitic capacity,an advantage is obtained that variations in the voltages respectivelyapplied to the sub power lines and the subground lines are reduced dueto the occurrence of an instantaneous large current.

[0124]FIG. 12 is a block diagram for describing one embodiment of thepresent invention. A power line VCC and a sub power line VCT, switchMOSFETs associated therewith, inverters, which constitute delay circuitsfor forming signals for controlling the MOSFETs, and circuit blockssupplied with operating voltages from the inverters, are shown in thesame drawing. Subground lines and a ground line for the respectivecircuit blocks employed in the present embodiment and switch MOSFETsassociated therewith are omitted because they are similar to those onthe source voltage VCC side.

[0125] In the present embodiment, the switch MOSFETs such as MOSFETs QP1through QP4 for connecting the sub power line VCT and the power line VCCto one another are respectively provided so as to correspond to circuitblocks 1 through 4. The sum of gate widths of the individual switchMOSFETs QP1 through QP4 is set to such a value as to fall within a rangein which the allowable voltage of the sub power line VCT varies due tothe on resistance of each switch MOSFET referred to above. A controlsignal φ supplied to the gates of the switch MOSFETs QP1 through QP4 istransferred to each of inverters IV1 through IV7 as a signal delayed inturn by each of inverters IV1 through IV7 in order of transferring it toeach of the circuit blocks 1 through 4 in turn.

[0126] Thus, when the sub power line VCT is shared between the pluralityof circuit blocks 1 through 4, the X-system circuit, the array block andthe Y-system and write circuit are respectively associated with thecircuit blocks in the above-described dynamic RAM, for example. In thepresent embodiment, the circuit block 1 is supplied with an operatingvoltage from the switch MOSFET QP1 so as to perform a logic operation inresponse to an input signal IN. At this time, the voltage VCC suppliedfrom the MOSFET QP1 is not sufficiently delivered or transferred to thecircuit blocks far away from the input signal side as in the case ofother circuit blocks 2 through 4 due to the distributed resistance ofthe sub power line VCT. However, since these circuit blocks performsignificant circuit operations in response to signals outputted from thepreceding-stage circuit blocks, a substantial problem does not occur.Namely, when the significant output signal corresponding to the inputsignal IN is transferred to the next-stage circuit block 2, the switchMOSFET QP2 is turned on so that the voltage VCC for performing a logicoperation associated with it is supplied to the circuit block 2. Thus,since the delay in signal at each logic stage and the supply of thevoltage to the sub power line VCT are carried out substantially insynchronism with each other, a substantial delay in operating speed doesnot occur.

[0127] The signal delay time developed in each logic circuit does notnecessarily coincide with the operation of each switch MOSFET referredto above. This is because since a delay in supplying the power delaysthe operation for outputting a high level in response to its delay, asubstantial logic output is actually formed dependent on the voltage ofthe sub power line VCT, which is supplied from each switch MOSFET. Thus,since the operating speed of each logic circuit becomes slow when thecontrol on each switch MOSFET is extremely delayed, the difference intime between the respective switch MOSFETs is set so that the peakcurrent referred to above falls below the allowance value and thevoltage is stepwise supplied to the power line.

[0128]FIG. 13 is a block diagram for explaining another embodiment ofthe present invention. The same drawing shows an example in which a subpower line and a subground line are respectively divided into pluralforms every circuit blocks. In the present example, the gate width ofeach switch MOSFET, which is determined by each of the values ofallowable voltages of each sub power line and each subground line, whichvaries due to an on resistance of each switch MOSFET, can be reduced ascompared with the case in which the sub power line is shared between thecircuit blocks.

[0129] As a result, charge and discharge currents, which flow throughthe gates of the respective switch MOSFETs QP10 through QP40 or thelike, are reduced. Further, a peak current can be reduced by startingthe switch MOSFETs in turn with the passage of time, using the pair ofsub power line and subground line for each circuit block activatedsubstantially in the same timing. At the same time, the startup of eachswitch MOSFET can be speeded up because the gate width of each switchMOSFET is small as compared with the case in which the sub power line isnot divided into the plural forms. When the circuit blocks free ofexecution of their circuit operations exist as in the Y-system and thewrite circuit at the refresh operation in the dynamic RAM, theircorresponding switch MOSFETs can remain held in an off state and hencecircuit's current consumption can be reduced.

[0130]FIG. 14 is a circuit diagram showing one example of an X-systeminput portion or unit employed in the dynamic RAM according to thepresent invention. A switch MOS control unit or circuit which has beenomitted in the above-described embodiment and an X-system input portionassociated with it are shown in the same drawing in combination.

[0131] The switch MOS control unit forms or produces a signal SWC forstarting a switch MOSFET in response to a clock signal generated at theearliest timing in response to an input signal of RASB. Thus, a firststage of a RAS clock generator, an X address buffer and the switch MOScontrol unit activated before each switch MOSFET is turned on, are notconnected to the sub power line and the subground line. An X predecoderand the subsequent stage of the RAS clock generator are electricallyconnected to the sub power line VCT and the subground line VST. Gatesand inverters at which output signals at the time of deactivation arelow (L) in level, are electrically connected to the sub power line VCT.Gates and inverters at which output signals are high (H) in level, areelectrically connected to the subground line VST as described above.Thus, each switch MOSFET is turned off upon deactivation to reduce asubthreshold leakage current developed in such gates and inverters,whereby a current consumed during standby is reduced.

[0132] Since the switch MOSFETs are parallel-connected in plural formand their gates are supplied with delayed signals, the switch MOSFETsare successively turned in domino or stepwise form. While suppressingtheir driving and a peak current produced due to their turning-on, thesub power line VCT and the subground line VST are supplied with theircorresponding VCC and VSS voltages, A signal SET inputted to the switchMOS control circuit is an initialization signal, which is used togenerate the switch MOS start signal SWC upon turning on of the power inthe circuit and turn on each switch MOSFET so as to increase the voltageon the sub power line VCT. A signal TEST is of a test signal, which isused to generate a start signal from the outside for thereby forciblyturning on each switch MOSFET. The signal TEST is pulled down to groundthrough the resistance of its input node and is normally fixed to a lowlevel.

[0133] Even if the RASB is brought to the high level, each switch MOSFETis turned off by a signal φτ produced by delaying a RAS reset signal bya time τ (˜5 n seconds) so as to avoid the immediate turning off of theswitch MOSFET. This is because since the circuit is precharged after theRASB has been brought to the high level, each switch MOSFET is held onduring that time.

[0134] When the dynamic RAM enters into a self-refresh mode (CBRrefresh), a self-refresh signal SELF is generated with timing A inresponse to the input of CBR (CAS before RAS) as shown in a timing chartin FIG. 15. In order to turn off the switch MOSFET except for the casewhere the dynamic RAM is actually performing a refresh operation in theself-refresh mode, to thereby reduce the subthreshold leakage current,the switch MOSFET can be controlled even by an internal signal IRASB.

[0135] If the refresh operation is set to concentrated refresh forconcentratedly performing refresh on all the memory cells and thereafterbringing them into a deactivated state until the next refresh, which israther than set to distributed refresh for uniformly dispersing andperforming one cyclic operation required to refresh all the memory cellsonce, within its holding time, then the number of times that the switchMOSFET is controlled, can be reduced. A multiplexer MPX provided withinthe X address buffer selects an address signal ADi or a refresh addresssignal RADi inputted from the external terminal in association with therefresh control signal SELF and takes it therein.

[0136] The SET signal is used to generate the start signal SWC for eachswitch MOSFET upon turning on the power in the circuit and turn on theswitch MOSFET so as to raise the voltage applied to the sub power lineVCT. As an alternative to the signal SET, this processing may beperformed by a MOSFET diode-connected between the power line VCC and thesub power line VCT. In this case, it is unnecessary to turn on theswitch MOSFET upon power-up. If each of nodes in internal circuits atpower-up is set to a potential at deactivation by the SET signal, thenthe supply of current to each of the internal circuits at power-up isall made by the power line VCC but not performed by the sub power lineVCT. Therefore, the voltage of the sub power line VCT can be raised evenby a diode having a low current supply ability.

[0137] Since the internal circuit is placed in an activated state wheneach switch MOSFET is in an on state upon power-up, the subthresholdleakage current flows. Since the potential on the sub power line VCTdoes not increase to VCC when the above-described diode is used, it ispossible to prevent the subthreshold leakage current from occurring. Afurther effect can be obtained when MOSFETs supplied with a substratebias by using a substrate back bias voltage generator, are used. In theMOSFETs to which the substrate bias is applied, the threshold voltage ofeach MOSFET becomes low and hence a large subthreshold leakage currentflows since the substrate back bias voltage generator does not generatea sufficient substrate bias voltage upon power-up.

[0138] Circuits such as the above-described address buffer, etc., whichare disconnected from the sub power line and the subground line, and theabove-described switch MOSFETs utilize high threshold-voltage typeMOSFETs to reduce the subthreshold leakage current at the time that theswitch MOSFETs are brought into the off state. In the present invention,a method of forming MOSFETs whose each channel length is made long usingthe dependence of the threshold voltage of each MOSFET on its gatelength, is used as a method of forming the MOSFETs whose each thresholdvoltage is high. Counter-doping to be described later is used to realizethe dependence of a desired threshold voltage on the gate length.

[0139] By realizing two or more types of threshold voltages using thegate-length-dependence of the threshold voltage of each MOSFET, at leasttwo masks (for P and N channels) can be reduced and the number ofmanufacturing process steps can be reduced as compared with a method ofrealizing two or more kinds of threshold: voltages by making anion-implantation division using conventional photomasks.

[0140]FIGS. 16A and 16B are respectively schematic structural sectionalviews showing examples of MOSFETs employed in a semiconductor integratedcircuit device according to the present invention. FIG. 16A shows anormally-used MOSFET and FIG. 16B illustrates a counter-doped MOSFET.The term counter-dope is a means for realizing a MOSFET, which isdifferent from the normal MOSFET shown in FIG. 16A, excellent in shortchannel characteristic and has a low threshold voltage, by introducingthe same conductive impurities as those contained in the source anddrain of a substrate surface into the MOSFET in small concentrations.

[0141]FIG. 17 is a characteristic diagram illustrating the relationshipbetween a gate length of an N channel MOSFET and its threshold voltage.In the same drawing, symbol ◯ indicates typical values of the MOSFETshown in FIG. 16A having the conventional structure. Symbol  indicatestypical values of a counter-doped transistor. These values becomevariations lying between upper and lower broken lines and between upperand lower solid lines, for example, due to process variations.

[0142] The allowable minimum value of each of the threshold voltages ofthe MOSFETs whose gate lengths are short, which constitute each internalcircuit connected to the sub power line and the subground line asdescribed above, is determined according to the subthreshold leakagecurrent of each internal circuit at the time that each switch MOSFET isheld on. In the example of the dynamic RAM shown in FIGS. 1 and 2, theallowable minimum value is about 0V at room temperature because the sumof the gate widths of the MOSFETs is about 700,000 μm. When the worstvalue of the threshold voltage, which is attributed to the processvariations, is set to 0V, the gate length of the MOSFET becomes 0.45 μmand the threshold voltage thereof becomes 0.29V (both are typicalvalues), for example, when the MOSFET having the conventional structureis used. On the other hand, when the counter-doped MOSFET is used, thegate length thereof becomes 0.45 μm and the threshold voltage thereofbecomes 0.2V (both are typical values).

[0143] At this time, the threshold voltage causes variations within Bindicated by a thick-line frame in FIG. 17 due to the process variationsin the case of the MOSFET having the conventional structure. When thecounter-doped MOSFET is used, the threshold voltage thereof causesvariations within A indicates by a thick-line frame in FIG. 17 due tothe process variations. Since the variations in threshold-voltage due tothe variations in gate length are reduced as a result of the suppressionor control of a short channel effect by the counter-dope, the typicalthreshold voltages can be reduced, so that a logic circuit or the likecan be designed using higher-speed MOSFETS.

[0144] The minimum value of each of the threshold voltages of theMOSFETs constituting the circuits disconnected from the sub power lineVCT and the subground line VST are also determined depending on theirsubthreshold leakage currents. In the dynamic RAM shown in FIGS. 1 and2, the minimum value becomes about 0.2V at room temperature. Thus, whenthe MOSFET having the conventional structure is used in the same manneras described above, the gate length thereof becomes 0.53 μm and thethreshold voltage becomes 0.42V (both are typical values), whereas whenthe counter-doped MOSFET is used, the gate length thereof becomes 0.55μm and the threshold voltage becomes 0.30V (both are typical values).The above-described threshold voltages respectively cause variationswithin D and C indicated by thick-line frames in FIG. 17 due to theprocess variations. Even in the case of the MOSFETs referred to above,high-speed MOSFETs, which are low in threshold voltage due to thecounter dope, can be utilized.

[0145] When the threshold voltages of the MOSFETs for providingconnections between the sub power line and the power line and betweenthe subground line and the ground line vary, subthreshold leakagecurrents at their turning off greatly vary. Thus, MOSFETs in whichvariations in their threshold voltages due to the process variations areas small as possible and their gate lengths are long, are used as theseswitch MOSFETs. To cope with this, the gate length at which a curveindicative of the dependence of the threshold voltage on the gate lengthis substantially flat, may be set to a range from 0.7 μm to 0.8 μm ormore in FIG. 17.

[0146] When the gate length of the switch MOSFET is made long, its onresistance is reduced. It is therefore necessary to increase the gatewidth thereof. Thus, it must be noted that the peak current at turningon of the switch MOSFET also increases. Namely, if the gate-lengthdependence of the threshold voltage is low, then the gate length of theswitch MOSFET may be set so as to become as short as possible. Thus, inthe present embodiment, when the MOSFET having the conventionalstructure is used, the gate length thereof becomes 0.8 μm and thethreshold voltage thereof becomes 0.5V (both are typical values).Further, when the counter-doped MOSFET is used, the gate length thereofbecomes 0.7 μm and the threshold voltage thereof becomes 0.35V (both aretypical values). The threshold voltages respectively vary within F and Eranges indicated by thick-line frames in FIG. 17.

[0147] Although the MOSFET of the conventional structure rather than thecounter-doped MOSFET bring about an advantageous effect because of itshigh threshold voltage from the viewpoint of the reduction in leakagecurrent, the leakage current of the switch MOSFET is very small ascompared with that of each circuit disconnected from the sub power lineand the subground line referred to above. Therefore, this effect can beneglected. Since a MOSFET having a short channel, a low thresholdvoltage and high drive ability can be used for the switch MOSFET as aresult of the control on the short channel effect by the counter dope,the gate width of the present switch MOSFET can be made smaller thanthat of the MOSFET having the conventional structure and the peakcurrent can be reduced.

[0148]FIG. 18 is a characteristic diagram for describing the presentinvention. In the same drawing, the vertical axis indicates a peakcurrent and an increase in RAS access time tARAS and the horizontal axisindicates a time difference per step of a control signal for each switchMOSFET. The result of a computer simulation using an actual dynamic RAMis illustrated in the drawing. A position or point where the timedifference per step of the control signal for each switch MOSFET is 0,indicates that all the switch MOSFETs are simultaneously turned on.

[0149] The switch MOSFETs are divided into five. The gate width of eachP channel MOSFET is 3000 μm and the gate width of each N channel MOSFETis 900 μm as shown in the drawing. It is understood from the samedrawing that in order to reduce the peak current to 300 mA or less, forexample, the switch MOSFETs are divided into plural form and a timedifference of 250 psec may be provided between their control signals. Itis understood that a delay (i.e., an increase in tRAS) in circuitoperation at this time is controlled to 200 psec. Since the tRAS fallswithin a range from 40 ns to 50 ns, the delay in circuit operation dueto the division of the switch MOSFETs in the plural form and the rise inthe time difference is nothing but 0.5% thereof. It is thus understoodfrom the invention of the present application that the peak current canbe controlled while maintaining the speeding up of the circuitoperation.

[0150]FIG. 19 is a circuit diagram showing another embodiment of thepresent invention. A circuit formed by connecting inverters in cascadeform is shown in the same drawing as an internal circuit by way ofillustrative example. The first-stage inverter is supplied with alow-level input signal upon deactivation. The output of the inverter isbrought to a high level (H) and the outputs of the inverters subsequentto this inverter are successively brought to a low level (L), a highlevel and a low level. Therefore, the inverters associated with the highlevels of the outputs are electrically connected to a subground line VSTand the inverters associated with the low levels of the outputs areelectrically connected to the sub power line VCT.

[0151] A P channel switch MOSFET MC is provided between the sub powerline VCT and a power line VCC and is switch-controlled by a controlsignal φB. An N channel switch MOSFET MS is provided between thesubground line VST and a ground line VSS and is switch-controlled by acontrol signal φT. In the present embodiment, a short-circuit N channelMOSFET MT is provided between the sub power line VCT and the subgroundline VST. The MOSFET MT is switch-controlled by a control signal PT.

[0152]FIG. 20 is a timing chart for describing the operation of theembodiment described above. When the internal circuit changes from anactive state to an inactive state, the control signal φB changes from alow to a high levels and the control signal φT changes from a high to alow levels. As a result, the switch MOSFETs MC and MS are shifted froman on state to an off state. In synchronism with this, the controlsignal PT is temporarily rendered high in level so that the switchMOSFET MT is turned on. Consequently, the sub power line VCT and the subground line VST are short-circuited so as to reach an intermediatepotential, whereby power consumption can be reduced.

[0153] When the short-circuit MOSFET MT is not provided, the chargestored in the parasitic capacitance of the sub power line VCT isdischarged through the turned-on N channel MOSFET of the inverter whoseon-deactivation output is low in level, when the sub power line VCT andthe subground VST are shifted from an on-activation voltage to anon-deactivation voltage. Conversely, the parasitic capacitance of thesubground line VST is charged through the turned-on P channel MOSFET ofthe inverter whose on-deactivation output is high in level. Thedischarge and charge currents are used as currents to be used up. On theother hand, when the short-circuit MOSFET MT is provided, the sub powerline VCT and the subground line VST can be varied to a predeterminedpotential required to reduce the subthreshold leakage current, with acharged share between their parasitic capacitances, in other words,without making special current consumption.

[0154] A pulse width of the control signal PT for switch-controlling theshort-circuit MOSFET MT is set so that the voltage on each of the subpower line VCT and the subground line VST reaches just theon-deactivation voltage. Described specifically, when the parasiticcapacitance is 200 pF, the pulse width of the control signal and thegate width of the switch MOSFET may be 100 ns and 10 μm respectively.

[0155] When the short-circuit MOSFET is not provided, voltagetransitions of the sub power line VCT and the subground line VST need100 μs because of the occurrence of charge and discharge due to thesubthreshold leakage current. On the other hand, when the short-circuitMOSFET MT is used, the voltage transition can be completed in 100 ns.

[0156] In the above-described embodiment, in order to reduce thesubthreshold leakage current by the threshold-voltage reduction, thelogic gates and the inverters whose on-deactivation outputs are high inlevel, are electrically connected to the power line VCC and the groundsides are electrically connected to the subground line VST. In thiscondition, the switch MOSFETs connected to such a subground line VST areturned off. Further, the logic gates and the inverters whoseon-deactivation outputs are low in level, are electrically connected tothe ground line VSS and the power sides are electrically connected tothe sub power line VCT. In this condition, the switch MOSFETs connectedto such a sub power line VCT are turned off.

[0157] The above-described embodiment is greatly characterized in thatwhen the above-described switches are changed from the on state to theoff state, they are divided in plural form and supplied with the delayedsignals so as to operate in the domino or stepwise system in order toreduce the drive currents of the switch MOSFETs each having therelatively large gate capacitance to obtain the desired on resistanceand reduce the peak of the source current with the turning on of eachswitch MOSFET. This means that each switch MOSFET provides the reductionin subthreshold leakage current by the sub power line and the subgroundline and has the potential for being used as a general power switch.Namely, a large number of function blocks can be designed so as to bemounted on one semiconductor substrate with developments insemiconductor technology. One digital information processing system canbe realized by itself. This tendency will be expected to greatlyincrease in the near future.

[0158] In this case, the large number of function blocks do not need tobe placed in an operating state at all times. When, at this time,function blocks free of the need to operate exist during a period inwhich a predetermined data process is being carried out, it issufficient significant that all the currents to be used up are cut offinclusive of the leakage current such as the subthreshold leakagecurrent. In such a case, large noise is not allowed to be produced in apower line when a power switch is in an on or off state if viewed from afunction block placed in an operating state. As seen from such aviewpoint, a large problem arises when a power supply for othernon-operated function blocks is turned off or turned on during a periodin which specific function blocks placed on one semiconductor integratedcircuit device are in operation.

[0159] However, the switch MOSFETs employed in the previous embodimentcan be set to the on or off state not so as to cause the peak currentreferred to above. Namely, the switch MOSFETs according to the presentinvention can be used as switch MOSFETs for selectively supplying powerto each circuit block formed in the semiconductor integrated circuitdevice.

[0160]FIG. 21 is a system configurational view showing one embodiment ofa one-chip microcomputer to which the present invention is applied. In amicrocomputer MCU employed in the present embodiment, a centralprocessing unit CPU of a stored program system, which includes anarithmetic and logic unit ALU, is used as a central component of themicrocomputer MCU. A multiplexer MULT, a memory management unit MMU anda cache memory CACHE are electrically connected to the centralprocessing unit CPU through a system bus S-BUS. An address conversiontable TLB is connected to the memory management unit MMU. Further, onthe other hand, the memory management unit MMU and the cache memoryCACHE are coupled to a cache bus C-BUS. A bus controller BSC iselectrically coupled to the cache bus C-BUS.

[0161] On the other hand, the bus controller BSC is connected to aperipheral bus P-BUS and an external bus E-BUS. Of these, connected tothe peripheral bus P-BUS are peripheral device controllers such as arefresh controller REFC, a direct memory access controller DMAC, a timercircuit TIM, a serial communication interface SCI, a digital/analogconverter D/A, an analog/digital converter A/D, etc., and a clockcontroller CKC. An external interface EXIF is coupled to the externalbus E-BUS.

[0162] On the other hand, the refresh controller REFC, the direct memoryaccess controller DMAC, the timer circuit TIM, the serial communicationinterface SCI, the digital/analog converter D/A and the analog/digitalconverter A/D are electrically connected to an interrupt controllerINTC. The interrupt controller INTC is electrically coupled to thecentral processing unit CPU through an interrupt request signal IRQ. Aclock pulse generator CPG and a plurality of clock switches to bedescribed later are electrically coupled to the clock controller CKC. Aportable information terminal PDA, an external memory, etc. areelectrically connected to the external interface EXIF.

[0163] Also connected to the interrupt controller INTC is a real timeclock circuit RTC. The real time clock circuit RTC is supplied with aclock signal having a stable frequency, which does not vary itsfrequency. Thus, the real time clock circuit RTC performs accurate timecontrol.

[0164] The real time clock circuit RTC outputs an interrupt signal RTCIto the interrupt controller INTC at predetermined time intervals so asto generate an interrupt request to the central processing unit CPU atpredetermined time intervals. The interrupt controller INTC is alsosupplied with an external interrupt signal OINT through a predeterminedexternal terminal. Thus, an external device is logically coupled to thecentral processing unit CPU through the interrupt controller INTC.

[0165] In the present embodiment, the clock controller CKC includes aplurality of control registers. The central processing unit CPU writespredetermined control data into these control registers through theperipheral bus P-BUS or reads it therefrom through the peripheral busP-BUS. The clock controller CKC selectively forms a control signalPLLON, PLLSB, C0SEL1, C0SEL2 or CKEN or the like in accordance with thecontrol data set to the respective control registers and selectivelyforms a plurality of module enable signals ADEN or the like.Incidentally, these control signals and the module enable signals areindicated by one interconnection or wire to avoid drawings from beingcumbersome. It is needless to say that the clock controller CKC may beelectrically connected to the system bus S-BUS in place of theperipheral bus P-BUS.

[0166] Now, the central processing unit CPU is activated in synchronismwith a system clock signal CK1 supplied from the clock pulse generatorCPG to thereby execute a predetermined arithmetic process in accordancewith a control program read from the cache memory CACHE, for example andcontrols and supervises respective portions of a microprocessor MPU. Atthis time, the arithmetic and logic unit ALU executes arithmetic andlogical operations as needed and the multiplier MULT executes amultiplication process. Further, the memory management unit MMU convertsa logical address outputted from the central processing unit CPU into aphysical address using an address conversion table TLB upon memoryaccess.

[0167] The cache memory CACHE is composed of a quick accessible memory.The cache memory CACHE reads and holds programs or data or the likestored in an external memory provided outside the microprocessor MPU inpredetermined block units and contributes to a high-speed operation ofthe central processing unit CPU. The central processing unit CPU, themultiplier MULT, the memory management unit MMU and the cache memoryCACHE are activated in accordance with a system clock signal CK1 havinga relatively high frequency.

[0168] The bus controller BSC manages access of the respectiveperipheral device controllers connected to the peripheral bus P-BUS tothe bus and controls the operation of each of these peripheral devicecontrollers. On the other hand, the refresh controller RFC correspondingto one of the peripheral device controllers controls the refreshoperation of the dynamic RAM (random access memory) provided as anexternal memory, and the direct memory access controller DMAC supportsthe high-speed transfer of data between the external memory and thecache memory CACHE or the like, for example.

[0169] The timer circuit TIM supports the management of time necessaryfor the central processing unit CPU and the serial communicationinterface SCI supports the transfer of serial data between the serialcommunication interface SCI and an external communication control deviceor the like. Further, the analog/digital converter A/D converts ananalog signal inputted from an external sensor or the like into adigital signal represented in predetermined bits. Reversely, thedigital/analog converter D/A converts a digital signal outputted fromthe central processing unit CPU into a predetermined analog signal andoutputs it to the outside.

[0170] The interrupt controller INTC alternatively receives interruptrequests sent from the respective peripheral device controllers in apredetermined priority order and transfers the selected one to thecentral processing unit CPU as an interrupt request signal IRQ. Theexternal interface EXIF controls and manages the transfer of databetween the respective portions of the microcomputer MCU and theportable information terminal PDA and the external memory or the likeprovided at its outside and interfaces between these external devicesand the microcomputer MCU. The bus controller BSC and the variousperipheral device controllers are activated in synchronism with a systemclock signal cks having a relatively low frequency.

[0171] In the present embodiment, the respective portions thatconstitute the microcomputer MCU, are formed into a single semiconductorintegrated circuit device LSI under predetermined layout conditions.However, these portions thereof are designed in modules as they say andare selectively formed based on customer or user specifications. Themicrocomputer MCU employed in the present embodiment are provided inassociation with each of the plurality of modules referred to above andhas a plurality of power switch MOSFETs selectively turned on inresponse to effective levels of their corresponding module enablesignals. Such switch MOSFETs are turned off upon deactivation thereof sothat current consumption thereat is substantially brought to zero.

[0172] The digital/analog converter D/A and the analog/digital converterA/D have linear circuit portions respectively. Even if they are in anon-operating state, relatively large current consumption is done. Theremay be often cases where they do not need to operate at all times. Thus,the current consumption at the time of the deactivation of the powerswitch MOSFETs can be brought to zero by interrupting the operatingcurrent with the power switch MOSFETs referred to above. Even in thecase of other digital circuits which cause leakage current such assubthreshold leakage current or the like, its power cutoff is made greatmeaningful.

[0173] In a system which has been brought into high integration andspeedup and rendered low in voltage using MOSFETs each brought to a lowthreshold voltage, the subthreshold leakage current presents a problemas in the dynamic RAM. It is therefore needless to say that the portionsin the respective function blocks, whose on-deactivation levels arefixed, are electrically connected to the sub power line and thesubground line and the switch MOSFETs connected thereto may be turnedoff so as to prevent the occurrence of such leakage current.

[0174] Operations and effects obtained from the above-describedembodiments are as follows:

[0175] (1) A plurality of switch MOSFETs are provided in parallel formbetween internal power lines for a plurality of circuit blocks dividedfor every functions and respectively set so as to perform circuitoperations in response to operation control signals and a power line fordelivering an operating voltage supplied from an external terminal.These switch MOSFETs are stepwise turned on in response to controlsignals produced by successively delaying the operation control signals,so as to provide the supply of operating voltages. As a result, anadvantageous effect can be brought about in that current consumption atthe time of deactivation (non-operation) of such function blocks ormodules can be brought to zero while preventing the occurrence of a peakcurrent at the time of the on/off state of each of the switch MOSFETs.

[0176] (2) A dynamic RAM is divided into an input circuit blockresponsive to an input signal supplied from an external terminal,inclusive of an operation start signal, an internal circuit blockactivated in response to the signal inputted from the input circuitblock, and an output circuit block for outputting a signal outputtedfrom the internal circuit block to an external terminal. A plurality ofswitch MOSFETs are provided in parallel form between a power line forapplying an operating voltage supplied from an external terminal andeach internal power line for a first circuit portion in the internalcircuit block, which does not need a storage operation upon itsnon-operating state. Further, the switch MOSFETs are stepwise turned onin response to controls signals produced by delaying a start signalsupplied through the input circuit block in turn, so as to perform thesupply of each operating voltage. As a result, an advantageous effectcan be brought about in that the occurrence of the peak current at thetime of the on/off state is avoided without sacrificing an operatingspeed and current consumption at the time of the deactivation(non-operation) of such each function block can be brought to zero.

[0177] (3) An advantageous effect can be brought about in that desiredcircuit functions can be maintained without sacrificing an operatingspeed by regularly supplying an operating voltage to each of the inputcircuit block, a second circuit portion of the internal circuit blockand the output circuit block from the power line.

[0178] (4) The internal circuit block is composed of CMOS circuits. Afirst circuit portion of the CMOS circuits includes a circuit whoseoutput signal is high in level when placed in a non-operating state,which is electrically connected to a first internal power linecorresponding to a ground voltage, and a circuit whose output signal islow in level, which is electrically connected to a second internal powerline associated with a source potential. Internal power switch circuitseach composed of a plurality of switch MOSFETs stepwise turned on inresponse to control signals formed by delaying the start signal in turn,are respectively provided between the first internal power line and apower line and between the second internal power line and a ground line.As a result, an advantageous effect can be brought about in that thesubthreshold leakage current can be reduced while maintaining anoperating speed and controlling a peak current.

[0179] (5) An advantageous effect can be obtained in that thresholdvoltages of P channel MOSFETs and N channel MOSFETs that constitute eachCMOS circuit, can be lowered so as to reduce the subthreshold leakagecurrent while maintaining a voltage reduction and an operation speedup.

[0180] (6) The input circuit block and the output circuit block arerespectively composed of CMOS circuits. P channel MOSFETs and N channelMOSFETs constituting each CMOS circuit, and MOSFETs constituting eachinternal power switch circuit referred to above, are set so as to berelatively large in threshold voltage as compared with the P channelMOSFETs and N channel MOSFETs of each CMOS circuit constituting theinternal circuit block. As a result, an advantageous effect can beobtained in that a high-speed operation can be maintained whilesuppressing the subthreshold leakage current.

[0181] (7) The above-described threshold voltages are respectively setaccording to a MOSFET channel-length dependence. Further, each ofcounter-doped layers, which is of the conductive type similar to thesource and drain of each MOSFET and contains a low concentration ofimpurities, is formed on the surface of each channel region. Thus, anadvantageous effect can be brought about in that a high-speed operationand a reduction in peak current can be achieved.

[0182] (8) The internal circuit block is divided into a plurality ofblocks according to its operation sequence. Further, the start signal isdelayed in synchronism with the operation sequence so as to be suppliedto each internal power switch circuit. Thus, an advantageous effect canbe brought about in that the current at the time of on/off-changeover ofeach power switch is further dispersed so that the peak current can bereduced.

[0183] (9) The input circuit block corresponds to an input circuitsupplied with an address signal and a control signal in an addressmultiplex system. The internal circuit block comprises a memory arrayusing dynamic memory cells, an X-system address select circuit thereof,and a Y-system address select circuit. The output circuit block isdivided into those such as a data input/output circuit according to theoperation sequence of the dynamic RAM and the power switch MOSFETs aresuccessively controlled. As a result, an advantageous effect can beobtained in that the peak current can be reasonably reduced whilemaintaining the operating speed.

[0184] (10) The internal power switch circuit provided in the Y-systemaddress select circuit is composed of one or a plurality of MOSFETs setso as to provide the flow of an operating current necessary for theoperation of such a circuit. A change in control signal supplied to thegate of each MOSFET is made slow using the fact that the time requiredto reach the start of its operation is long. As a result, anadvantageous effect can be obtained that the peak current can be reducedin a simple structure.

[0185] (11) A short-circuit switch MOSFET temporarily turned on wheninternal power switch MOSFETs associated with the first internal powerline and the second internal power line are turned off, is providedbetween the first internal power line and the second internal powerline. Thus, since a charge share between the first and second internalpower lines allows high-speed determination of voltages at theirdeactivation, an advantageous effect can be brought about in that afurther reduction in subthreshold leakage current can be achieved.

[0186]FIG. 22 is a circuit diagram illustrating a portion of the circuitshown in FIG. 14 by MOSFETs. CMOS inverters INV1, INV2, INV3, INV4,INV5, a P channel MOSFET QP60, a N channel MOSFET QN60, a SWC and anINT1 shown in FIG. 22 respectively correspond to the CMOS invertersINV1, INV2, INV3, INV4, INV5, the P channel MOSFET Q60, the N channelMOSFET QN60, the SWC and the INT1 shown in FIG. 14.

[0187] A subthreshold leakage current can be reduced by setting thethreshold value of a MOSFET QP60 constituting an internal power switchcircuit provided between a sub power line VCT and a power line VCC so asto be relatively larger than the threshold values of a P channel MOSFETQP62 and an N channel MOSFET QN62 constituting the INV4 and making achannel length long using the dependence of a threshold value on a gatelength.

[0188] The CMOS inverter INV2 shown in FIG. 22 is a circuit forcontrolling the internal power switch circuit QP60 and cannot beconnected to the sub power line VCT and a subground line VST.

[0189] Therefore, a channel length is made long using a gate-lengthdependence and the threshold value of the CMOS inverter INV2 is set soas to relatively larger than the threshold values of the P channelMOSFET QP62 and the N channel MOSFET QN62 constituting the INV4. As aresult, a subthreshold leakage current can be reduced.

[0190] The counter dope described with reference to FIG. 16B is used forthe MOSFETs that constitute the CMOS inverters INV1, INV2, INV3, INV4and INV5, for example. For example, a channel length of an N channelMOSPET QN61, which constitutes the CMOS inverter INV2, is made longusing the dependence of its threshold voltage on the gate length thereofso as to reduce the subthreshold leakage current. However, the thresholdvoltage of the N channel MOSFET QN61 will cause process variations.

[0191] Therefore, the counter dope described with reference to FIG. 16Bis used to reduce variations in the threshold voltage due to the processvariations of the N channel MOSFET QN61. Thus, the threshold voltage ofthe N channel MOSFET QN61 can be reduced and the N channel MOSFET QN61that forms the N channel MOSFET QN61, can be activated at high speed.

[0192] The inventions made by the present inventors, have beenspecifically described based on the embodiments. However, the inventionsof the present application are not necessarily limited to theabove-described embodiments. It is needless to say that various changescan be made thereto without departing the gist of the present invention.A method of forming MOSFETs each having such a threshold voltage as tosubstantially avoid a problem offered by the subthreshold leakagecurrent as in the case of, for example, the input portion, the outputcircuit and the power switch MOSFETS, can take various forms such as theutilization of the channel-length dependence, an increase in the densityof impurities at a channel portion, control on gate insulating films orthe supply of a deep back bias to a substrate with the MOSFETs formedtherein, etc.

[0193] In the internal circuit employed in the dynamic RAM, theoperation mode is set by the control signal supplied from the externalterminal. However, the operation mode may be determined by a command asin a synchronous dynamic RAM. In this case, the switch MOSFETs may becontrolled by a control timing circuit supplied with a command dataoutput. In a static RAM, each switch MOSFET may be controlled by a chipenable signal. However, since a circuit operating mode exists in astatic RAM for a cache memory even if an external input signal is notvaried, a switch MOS control circuit may also perform switch controlbased on a mode decision signal or the like correspondingly. The presentinvention is applicable to various semiconductor integrated circuitdevices each composed of MOSFETs as well as to the memory circuit andthe one chip microcomputer referred to above.

[0194] Advantageous effects obtained by a typical one of the inventionsdisclosed in the present application will be described in brief asfollows: A plurality of switch MOSFETs are provided in parallel formbetween internal power lines for a plurality of circuit blocks dividedfor every functions and respectively set so as to perform circuitoperations in response to operation control signals and a power line fordelivering an operating voltage supplied from an external terminal.These switch MOSFETs are stepwise turned on in response to controlsignals produced by successively delaying the operation control signals,so as to provide the supply of operating voltages. As a result, currentconsumption at the time of deactivation (non-operation) of such functionblocks or modules can be brought to zero while preventing the occurrenceof a peak current at the time of the on/off state of each switch MOSFET.

[0195] A dynamic RAM is divided into an input circuit block responsiveto an input signal supplied from an external terminal, inclusive of anoperation start signal, an internal circuit block activated in responseto the signal inputted from the input circuit block, and an outputcircuit block for outputting a signal outputted from the internalcircuit block to an external terminal. A plurality of switch MOSFETs areprovided in parallel form between a power line for applying an operatingvoltage supplied from an external terminal and an internal power linefor a first circuit portion in the internal circuit block, which doesnot need a storage operation upon its non-operating state. Further, theswitch MOSFETs are turned on in a domino mode in response to controlssignals produced by delaying a start signal in turn, so as to performthe supply of each operating voltage. As a result, the occurrence of thepeak current at the time of the on/off state of each MOSFET can beavoided without sacrificing an operating speed and current consumptionat the time of the deactivation (non-operation) of such each functionblock can be brought to zero.

[0196] Having now fully described the invention, it will be apparent tothose skilled in the art that many changes and modifications can be madewithout departing from the spirit or scope of the invention as set forthherein.

We claim:
 1. A semiconductor device comprising: a plurality of memorycells; an X-system circuit for accessing said plurality of memory cells,said X-system circuit including a plurality of MOSFETs; a Y-systemcircuit for accessing said plurality of memory cells; a first circuitprovided in order to reduce a subthreshold leakage current of saidplurality of MOSFETs of said X-system circuit; and a second circuitprovided in order to reduce a subthreshold leakage current of saidplurality of MOSFETs of said Y-system circuit, wherein said firstcircuit and said second circuit are activated at different timings fromeach other.
 2. A semiconductor integrated circuit according to claim 1 ,wherein said X-system circuit includes a first decoder, and wherein saidY-system circuit includes a second decoder.
 3. A semiconductor devicecomprising: a plurality of memory cells; an X decoder for said pluralityof memory cells, said X decoder including a plurality of MOSFETs; a Ydecoder for said plurality of memory cells, said Y decoder including aplurality of MOSFETs; a first circuit provided in order to reduce asubthreshold leakage current of said plurality of MOSFETs of said Xdecoder; and a second circuit provided in order to reduce a subthresholdleakage current of said plurality of MOSFETs of said Y decoder, whereinsaid first circuit and said second circuit are activated at differenttimings from each other.
 4. A semiconductor device according to claim 3, wherein said second circuit activates after said first circuitactivates.
 5. A semiconductor device comprising: a plurality of memorycells; a plurality of sense amplifiers; a first address decoder, saidfirst address decoder including a plurality of MOSFETs; a second addressdecoder, said first address decoder including a plurality of MOSFETs; afirst circuit provided in order to reduce a subthreshold leakage currentof said plurality of MOSFETs of said first address decoder; a secondcircuit provided in order to reduce a subthreshold leakage current ofsaid plurality of MOSFETs of said second address decoder; and a thirdcircuit provided in order to reduce a subthreshold leakage current ofsaid plurality of sense amplifiers, wherein said first, second and thirdcircuits are activated at different timings from each other.
 6. Asemiconductor device according to claim 5 , wherein said third circuitactivates after said first circuit activates, and wherein said secondcircuit activates after said third circuit activates.
 7. A semiconductordevice comprising: a plurality of memory cells; a plurality of senseamplifiers; an address decoder for decoding a plurality of X addresssignals, said address decoder including a plurality of transistors; afirst circuit provided in order to reduce a subthreshold leakage currentof said plurality of transistors of said address decoder; and a secondcircuit provided in order to reduce a subthreshold leakage current ofsaid plurality of transistors of said plurality of sense amplifiers,wherein said first circuit and said second circuit are activated atdifferent timings from each other.
 8. A semiconductor device accordingto claim 7 , wherein said second circuit activates after said firstcircuit activates.
 9. A semiconductor memory device comprising: aplurality of memory cells; a first circuit block comprising a pluralityof transistors; a second circuit block comprising a plurality oftransistors; a first circuit which enables to reduce a leakage currentof said plurality of transistors of said first circuit a second circuitwhich enables to reduce a leakage current of said plurality oftransistors of said second circuit block, wherein said first circuitincludes a first terminal coupled to said first circuit block, a secondterminal supplied with a first voltage and a first switch coupledbetween said first terminal and said second terminal, wherein saidsecond circuit includes a third terminal coupled to said second circuitblock, a fourth terminal supplied with a second voltage and a secondswitch coupled between said third terminal and said fourth terminal,wherein said first switch is controlled by a first control signal,wherein said second switch is controlled by a second control signalwhich is different from said first control signal, and wherein achanging time of said second control signal from a disable level to anenable level is longer than a changing time of said first control signalfrom said disable level to said enable level.
 10. A semiconductor deviceaccording to claim 9 , wherein said first circuit block comprises an Xsystem circuit for said plurality of memory cells, and wherein saidsecond circuit block comprises a Y system for said plurality of memorycells.
 11. A semiconductor device according to claim 10 . wherein saidchanging time of said second control signal from said disable level tosaid enable level is more than two times said changing time of saidfirst control signal from said disable level to said enable level.
 12. Asemiconductor device according to claim 9 , wherein the level of saidfirst voltage is the same as that of said second voltage.
 13. Asemiconductor device comprising: a plurality of memory cells; an Xdecoder including a plurality of transistors; a Y decoder including aplurality of transistors; a first circuit provided in order to reduce asubthreshold leakage current of said plurality of transistors of said Xdecoder; and a second circuit provided in order to reduce a subthresholdleakage current of said plurality of transistors of said Y decoder,wherein said first circuit includes a first terminal coupled to saidfirst circuit block, a second terminal supplied with a first voltage anda first switch coupled between said first terminal and said secondterminal, wherein said second circuit includes a third terminal coupledto said second circuit block, a fourth terminal supplied with a secondvoltage and a second switch coupled between said third terminal and saidfourth terminal, wherein said first switch is controlled by a firstcontrol signal, and wherein said second switch is controlled by a secondcontrol signal which is different from said first control signal.
 14. Asemiconductor device according to claim 13 , wherein the level of firstvoltage is the same as that of said second voltage.
 15. A semiconductordevice according to claim 13 , wherein said second control signalchanges from a disable level to an enable level after said first controlsignal changes from said disable level to said enable level.
 16. Asemiconductor device comprising: a plurality of memory cells; an Xdecoder for decoding a plurality of X address signals, said X decoderincluding a plurality of transistors; a Y decoder for decoding aplurality of Y address signals, said Y decoder including a plurality oftransistors; a first circuit provided in order to reduce a subthresholdleakage current of said plurality of transistors of said X decoder; anda second circuit provided in order to reduce a subthreshold leakagecurrent of said plurality of transistors of said Y decoder, wherein saidsemiconductor device receives said strobe signal, wherein saidsemiconductor receives said plurality of Y address signals insynchronism with a second strobe signal which is different from saidfirst strobe signal, and wherein said first circuit and said secondcircuit are activated at different timings from each other.
 17. Asemiconductor device according to claim 16 , wherein said second circuitactivates after said first circuit activates.
 18. A semiconductor deviceaccording to claim 16 , wherein said first strobe signal is a RASsignal, and wherein said second strobe signal is a CAS signal.